PART |
Description |
Maker |
NESG2101M16-T3-A NESG2101M16 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
NESG2101M05-T1-A NESG2101M05 |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
NESG2030M04-T2-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR npn型硅锗高频晶体管
|
Duracell
|
NESG2021M16-T3-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Micro Devices Corporation
|
NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell California Eastern Laboratories, Inc.
|
NESG3031M05 NESG3031M05-T1 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp. NEC[NEC]
|
2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
HA31006ANP HA31006ANPTL-E |
SiGe MMIC High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation
|
NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声,高增益放 NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp. NEC Corp. NEC[NEC]
|
AT45DB321C-CC AT45DB321C-RI AT45DB321C-CI AT45DB32 |
32 MEGABIT 2.7 VOLT DATAFLASH TRANSI, NPN, 160V, 600MA, 2W, SOT223, CZT5551 DIODE/SM,REC*1A*60V 32M X 1 FLASH 2.7V PROM, PDSO28
|
Atmel Corp. Atmel, Corp.
|
NESG204619-T1-A NESG204619 NESG204619-A |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
CEL[California Eastern Labs]
|